Spin‐Gapless Semiconductors

Power Semiconductors

The objective of this paper is present the data requirements for modeling power electronic devices to aid in modeling power converters for transient simulation studies. The presentation will target applications of power semiconductor devices commonly used in medium to high power applications: insulated gate bipolar transistors (IGBTs), Thyristors (SCR), and Gate TurnOff Thyristors (GTOs) and po...

Monolayer Semiconductors

Silicon may be unable to continue serving as the backbone for future technologies. The search for silicon replacements has led to the investigation of thin 2-D materials. Some of these materials are single layers of group VI transition metal dichalcogenides. Through mechanical exfoliation, these materials can be isolated and used to construct monolayer field effect transistors. A transfer proce...

Organic Semiconductors

History With the invention of the transistor around the middle of the last century, inorganic semiconductors such as Si or Ge began to take over the role as the dominant material in electronics from the previously dominant metals. At the same time, the replacement of vacuum tube based electronics by solid state devices initiated a development which by the end of the 20th century has lead to the...

Ferromagnetic semiconductors

The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some detail. Results of a quantitative comparison between ...

Compound Semiconductors